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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation vs.
Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
*Notes:
1. V GS = 0V
0.5
*Notes:
1. V GS = 10V
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
2. I D = 10mA
-50 0 50 100 150 200
o
0.0
-100
2. I D = 75A
-50 0 50 100 150
o
200
Figure 9. Maximum Safe Operating Area
1000
Figure 10. Maximum Drain Current
vs. Case Temperature
250
100
100 μ s
1ms
10ms
200
150
10
Operation in This Area
is Limited by R DS(on)
100ms
DC
100
SINGLE PULSE
T C = 25 C
T J = 175 C
1
o
o
50
Limited by package
R θ JC = 0.4 C/W
o
T C , Case Temperature [ C ]
0.1
0.1
1 10
V DS , Drain-Source Voltage [V]
100
0
25
50 75 100 125 150
o
175
Figure 11. Transient Thermal Response Curve
0.5
0.5
0.1
0.2
P DM
0.1
0.05
t 1
t 2
1. Z θ JC (t) = 0.4 C/W Max.
0.01
0.02
0.01
Single pulse
*Notes:
o
2. Duty Factor, D= t 1 /t 2
10
10
10
10
10
10
10
0.005
-5
-4
-3
-2
3. T JM - T C = P DM * Z θ JC (t)
-1 0
1
t 1 , Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
?2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. C3
4
www.fairchildsemi.com
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